SINGLE-GROWTH-STEP GAAS/ALGAAS DISTRIBUTED-BRAGG-REFLECTOR LASERS WITH HOLOGRAPHICALLY-DEFINED RECESSED GRATINGS

A ridge waveguide GaAs/AlGaAs quantum well DBR laser fabricated with a simplified grating recess-technology and a third order prating is described. The reflector is fabricated on top of a recessed waveguide using holographic exposure followed by reactive ion etching. The laser operates on a single longitudinal and lateral mode with threshold current as low as 20mA, output power 5mW per facet and is intended for monolithically integrated interferometer applications.