Evidence of nitric-oxide-induced surface band bending of indium tin oxide

被引：15

作者：

Hu, JQ

Pan, JS

Zhu, FR

Gong, H

机构：

[1] Inst Mat Res & Engn, Singapore 117602, Singapore

[2] Natl Univ Singapore, Dept Mat Sci, Singapore 117576, Singapore

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 11期

关键词：

D O I：

10.1063/1.1719268

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interaction of indium tin oxide (ITO) film with nitric oxide (NO) has been investigated in situ by a four-point probe and x-ray photoelectron spectroscopy (XPS). The XPS N 1s peak emerged at a high binding energy of 404 eV indicating that NO was molecularly adsorbed on ITO surface. The adsorption of NO on ITO surface also induced a 0.2 eV shift in its valence band maximum to the low binding energy side leading to an upward surface band bending. We have shown that the increase in the ITO sheet resistance was attributed to its surface band bending. (C) 2004 American Institute of Physics.

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收藏

页码：6273 / 6276

页数：4

相关论文

共 24 条

[11] Effect of process parameters on the characteristics of indium tin oxide thin film for flat panel display application [J].

Lee, BH ;

Kim, IG ;

Cho, SW ;

Lee, SH .

THIN SOLID FILMS, 1997, 302 (1-2) :25-30

[12] Effects of aquaregia treatment of indium-tin-oxide substrates on the behavior of double layered organic light-emitting diodes [J].

Li, F ;

Tang, H ;

Shinar, J ;

Resto, O ;

Weisz, SZ .

APPLIED PHYSICS LETTERS, 1997, 70 (20) :2741-2743

[13] Improvement of hole injection in phenyl-substituted electroluminescent devices by reduction of oxygen deficiency near the indium tin oxide surface [J].

Low, B ;

Zhu, FR ;

Zhang, KR ;

Chua, S .

APPLIED PHYSICS LETTERS, 2002, 80 (24) :4659-4661

[14] Indium tin oxide overlayered waveguides for sensor applications [J].

Luff, BJ ;

Wilkinson, JS ;

Perrone, G .

APPLIED OPTICS, 1997, 36 (27) :7066-7072

[15] Characterization of treated indium-tin-oxide surfaces used in electroluminescent devices [J].

Mason, MG ;

Hung, LS ;

Tang, CW ;

Lee, ST ;

Wong, KW ;

Wang, M .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) :1688-1692

[16] Surface oxidation activates indium tin oxide for hole injection [J].

Milliron, DJ ;

Hill, IG ;

Shen, C ;

Kahn, A ;

Schwartz, J .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :572-576

[17]

Nüesch F, 1999, APPL PHYS LETT, V74, P880, DOI 10.1063/1.123397

[18] CARRIER TUNNELING AND DEVICE CHARACTERISTICS IN POLYMER LIGHT-EMITTING-DIODES [J].

PARKER, ID .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (03) :1656-1666

[19] (PHOTO)ELECTROCHEMICAL CHARACTERIZATION OF TIN-DOPED INDIUM OXIDE [J].

VANDENMEERAKKER, JEAM ;

MEULENKAMP, EA ;

SCHOLTEN, M .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (05) :3282-3288

[20] Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic light emitting devices [J].

Wu, CC ;

Wu, CI ;

Sturm, JC ;

Kahn, A .

APPLIED PHYSICS LETTERS, 1997, 70 (11) :1348-1350