Spontaneous decomposition and ordering during epitaxial growth

被引:11
作者
Léonard, F
Desai, R
机构
[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
[2] Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, Canada
关键词
spontaneous decomposition/ordering; epitaxial growth; molecular-beam deposition;
D O I
10.1016/S0040-6090(99)00473-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The growth of alloy layers by molecular-beam deposition is considered theoretically, with emphasis on the connection between local variations in the composition and surface roughening. For alloy layers mismatched to the substrate, the elastic fields generated by the mismatch couple with the elastic fields generated by compositional inhomogeneities, leading to a joint compositional/morphological instability under certain growth conditions. We show that the non-equilibrium nature of the growth leads to a competition between these strain relieving mechanisms, the alloy thermodynamics and the kinetics of the deposition process. We show explicitly how our theory is applied to real systems, taking InGaAs layers as an example. The theory is generalized to include the formation of atomically ordered phases during growth, by focusing on the experimentally observed relation between ordering and local surface misorientations. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:46 / 52
页数:7
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