Observation of vertical and lateral Ge segregation in thin undulating SiGe layers on Si by electron energy-loss spectroscopy

被引:81
作者
Walther, T [1 ]
Humphreys, CJ [1 ]
Cullis, AG [1 ]
机构
[1] UNIV SHEFFIELD,DEPT ELECT & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
关键词
D O I
10.1063/1.119653
中图分类号
O59 [应用物理学];
学科分类号
摘要
The local Ge composition in undulating Si0.8Ge0.2 layers on Si has been studied in a scanning transmission electron microscope using electron energy-loss spectroscopy. We observe Ge enrichment of the SiGe layer near the free surface (vertical Ge segregation in the growth direction) as well as Ge depletion of the ripple troughs compared to the peaks (lateral segregation). These lateral compositional fluctuations are likely to retard the generation of misfit dislocations and might be relevant to the Stranski-Krastanov growth of strained epitaxial alloy layers as well as to the self-organized growth of quantum dot structures. (C) 1997 American Institute of Physics.
引用
收藏
页码:809 / 811
页数:3
相关论文
共 28 条
[1]   PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE OF SIGE DOTS FABRICATED ISLAND GROWTH [J].
APETZ, R ;
VESCAN, L ;
HARTMANN, A ;
DIEKER, C ;
LUTH, H .
APPLIED PHYSICS LETTERS, 1995, 66 (04) :445-447
[2]   ARE BARE SURFACES DETRIMENTAL IN EPITAXIAL-GROWTH [J].
COPEL, M ;
TROMP, RM .
APPLIED PHYSICS LETTERS, 1991, 58 (23) :2648-2650
[3]   MISFIT DISLOCATION SOURCES AT SURFACE RIPPLE TROUGHS IN CONTINUOUS HETEROEPITAXIAL LAYERS [J].
CULLIS, AG ;
PIDDUCK, AJ ;
EMENY, MT .
PHYSICAL REVIEW LETTERS, 1995, 75 (12) :2368-2371
[4]   GROWTH RIPPLES UPON STRAINED SIGE EPITAXIAL LAYERS ON SI AND MISFIT DISLOCATION INTERACTIONS [J].
CULLIS, AG ;
ROBBINS, DJ ;
BARNETT, SJ ;
PIDDUCK, AJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1994, 12 (04) :1924-1931
[5]   Growth morphology evolution and dislocation introduction in the InGaAs/GaAs heteroepitaxial system [J].
Cullis, AG ;
Pidduck, AJ ;
Emeny, MT .
JOURNAL OF CRYSTAL GROWTH, 1996, 158 (1-2) :15-27
[6]   ATOMISTIC MODELS OF VACANCY-MEDIATED DIFFUSION IN SILICON [J].
DUNHAM, ST ;
WU, CD .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) :2362-2366
[7]   INVOLVEMENT OF THE TOPMOST GE LAYER IN THE GE SURFACE SEGREGATION DURING SI/GE HETEROSTRUCTURE FORMATION [J].
FUJITA, K ;
FUKATSU, S ;
YAGUCHI, H ;
SHIRAKI, Y ;
ITO, R .
APPLIED PHYSICS LETTERS, 1991, 59 (18) :2240-2241
[8]   SELF-LIMITATION IN THE SURFACE SEGREGATION OF GE ATOMS DURING SI MOLECULAR-BEAM EPITAXIAL-GROWTH [J].
FUKATSU, S ;
FUJITA, K ;
YAGUCHI, H ;
SHIRAKI, Y ;
ITO, R .
APPLIED PHYSICS LETTERS, 1991, 59 (17) :2103-2105
[9]  
GERTON R, 1986, ELECT ENERGY LOSS SP
[10]   Morphological stability of alloy thin films [J].
Guyer, JE ;
Voorhees, PW .
PHYSICAL REVIEW B, 1996, 54 (16) :11710-11724