Absorbing film assisted laser induced forward transfer of fungi (Trichoderma conidia)

被引:80
作者
Hopp, B
Smausz, T
Antal, Z
Kresz, N
Bor, Z
Chrisey, D
机构
[1] Hungarian Acad Sci, H-6720 Szeged, Hungary
[2] Univ Szeged, Res Grp Laser Phys, H-6720 Szeged, Hungary
[3] Hungarian Acad Sci, H-6701 Szeged, Hungary
[4] Univ Szeged, Microbiol Res Grp, H-6701 Szeged, Hungary
[5] Univ Szeged, Dept Opt & Quantum Elect, H-6720 Szeged, Hungary
[6] USN, Res Lab, Washington, DC 20375 USA
基金
匈牙利科学研究基金会;
关键词
D O I
10.1063/1.1782275
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present an investigation on absorbing film assisted laser induced forward transfer (AFA-LIFT) of fungus (Trichoderma) conidia. A KrF excimer laser beam [lambda=248 nm,FWHM=30 ns (FWHM, full width at half maximum)] was directed through a quartz plate and focused onto its silver coated surface where conidia of the Trichoderma strain were uniformly spread. The laser fluence was varied in the range of 0-2600 mJ/cm(2) and each laser pulse transferred a pixel of target material. The average irradiated area was 8x10(-2) mm(2). After the transfer procedure, the yeast extract medium covered glass slide and the transferred conidia patterns were incubated for 20 h and then observed using an optical microscope. The transferred conidia pixels were germinated and the areas of the culture medium surfaces covered by the pixels were evaluated as a function of laser fluence. As the laser fluence was increased from 0 to 355 mJ/cm(2) the transferred and germinated pixel area increased from 0 to 0.25 mm(2). Further increase in fluence resulted in a drastic decrease down to an approximately constant value of 0.06 mm(2). The yield of successful transfer by AFA-LIFT and germination was as much as 75% at 355 mJ/cm(2). The results prove that AFA-LIFT can successfully be applied for the controlled transfer of biological objects. (C) 2004 American Institute of Physics.
引用
收藏
页码:3478 / 3481
页数:4
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