Carbon induced restructuring of the Si(111) surface

被引：17

作者：

Pignedoli, CA

Catellani, A

Castrucci, P

Sgarlata, A

Scarselli, M

De Crescenzi, M

Bertoni, CM

机构：

[1] Univ Modena & Reggio Emilia, Dipartimento Fis, INFM, Natl Res Ctr S3, I-41100 Modena, Italy

[2] CNR, IMEM, I-43010 Parma, Italy

[3] Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy

[4] Univ Roma Tor Vergata, Unita INFM, I-00133 Rome, Italy

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.69.113313

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a combined experimental and theoretical investigation of the early carbonization stages of the Si(111)-(7x7) surface upon acetylene exposure. Scanning tunneling microscopy images reveal the formation of a (root3xroot3)R30degrees reconstruction. Ab initio calculations allow us to characterize this reconstruction as a carbon-rich silicon phase due to subsurface incorporation of C atoms.

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页数：4

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