High-efficiency, high-speed VCSELs with deep oxidation layers

被引：44

作者：

Chang, Y. C. ^{[1
]}

Wang, C. S. ^{[1
]}

Johansson, L. A. ^{[1
]}

Coldren, L. A. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

ELECTRONICS LETTERS | 2006年 / 42卷 / 22期

关键词：

D O I：

10.1049/el:20062538

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel method to reduce the parasitics of vertical-cavity surface-emitting lasers (VCSELs) using deep oxidation layers is proposed. Using this method, high-efficiency, high-speed 980 rim, tapered-aperture VCSELs with a -3 dB frequency of 17.9 GHz, the highest bandwidth without using proton implantation, are demonstrated.

引用

页码：1281 / 1283

页数：3

共 7 条

[1] Polyimide-planarized vertical-cavity surface-emitting lasers with 17.0-GHz bandwidth [J].

Al-Omari, AN ;

Lear, KL .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (04) :969-971

[2] Scattering losses from dielectric apertures in vertical-cavity lasers [J].

Hegblom, ER ;

Babic, DI ;

Thibeault, BJ ;

Coldren, LA .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) :379-389

[3] Vertical cavity lasers on p-doped substrates [J].

Lear, KL ;

Hou, HQ ;

Banas, JJ ;

Hammons, BE ;

Furioli, J ;

Osinski, M .

ELECTRONICS LETTERS, 1997, 33 (09) :783-784

[4]

LEAR KL, 1997, OPTICS PHOTONICS SER, V7, P69

[5] BAND-GAP ENGINEERED DIGITAL ALLOY INTERFACES FOR LOWER RESISTANCE VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].

PETERS, MG ;

THIBEAULT, BJ ;

YOUNG, DB ;

SCOTT, JW ;

PETERS, FH ;

GOSSARD, AC ;

COLDREN, LA .

APPLIED PHYSICS LETTERS, 1993, 63 (25) :3411-3413

[6]

SUZUKI N, 2006, OPT FIB COMM C

[7]

WILMSEN C, 1999, VERTICAL CAVITY SURF, pCH5

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