Modeling of NBTI degradation and its impact on electric field dependence of the lifetime

被引：27

作者：

Aono, H ^{[1
]}

Murakami, E ^{[1
]}

Okuyama, K ^{[1
]}

Nishida, A ^{[1
]}

Minami, M ^{[1
]}

Ooji, Y ^{[1
]}

Kubota, K ^{[1
]}

机构：

[1] Renesas Technol Corp, Hitachinaka, Ibaraki 3128504, Japan

来源：

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS | 2004年

关键词：

pMOSFET; negative bias temperature instability; degradation saturation; Eox power-law;

D O I：

10.1109/RELPHY.2004.1315296

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Negative Bias Temperature Instability of p-MOSFETs is investigated under various stress gate voltages and temperatures. It is shown that degradation tends to saturate and the dependence of lifetime on electric field (Eox) is expressed as a power-law of Eox. We propose new empirical and kinetic models. The Eox dependence of the lifetime described by the power-law is derived from our empirical model describing the saturation of degradation. Moreover, our kinetic model explains the saturation behavior.

引用

页码：23 / 27

页数：5

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