Dissolution inhibitors for 157 nm lithography: A progress report

被引:13
作者
Conley, W
Miller, D
Chambers, C
Trinque, BC
Osborn, B
Chiba, T
Zimmerman, P
Dammel, R
Romano, A
Willson, CG
机构
[1] Int SEMATECH, Austin, TX USA
[2] Univ Texas, Dept Chem, Austin, TX 78712 USA
[3] Univ Texas, Dept Chem Engn, Austin, TX 78712 USA
[4] Clariant Corp, Branchbury, NJ USA
关键词
157nm resist; polyfluoronorbornane; dissolution inhibitor; DNQ; carbon monoxide copolymers;
D O I
10.2494/photopolymer.15.613
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Fluorocarbon based polymers have been identified as promising resist candidates for 157nm material design because of their. relatively high transparency at this wavelength. This paper reports our recent progress toward developing 157nm resist materials based on transparent dissolution inhibitors. These 2 component resist systems have been prepared and preliminary imaging studies at 157nm are described. Several new approaches to incorporating these transparent monomers into functional polymers have been investigated and are described. The lithographic performance of some of these polymers is discussed.
引用
收藏
页码:613 / 617
页数:5
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