Implantation temperature dependence of He bubble formation in Si

被引：11

作者：

da Silva, DL

Fichtner, PFP

Behar, M

Peeva, A

Koegler, R

Skorupa, W

机构：

[1] Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil

[2] Univ Fed Rio Grande Sul, Dept Met, BR-91501970 Porto Alegre, RS, Brazil

[3] Res Ctr Rossendorf, Dresden, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2002年 / 190卷

关键词：

defects; voids; bubbles; ion implantation; radiation effects; helium; silicon;

D O I：

10.1016/S0168-583X(01)01260-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We report experimental results on the formation of He bubbles in Cz grown (10 0) Si crystals implanted with 40 keV He+ ions to a fluence of 1 x 10(16) cm(-2) at distinct implantation temperatures within the 373 less than or equal to T-i less than or equal to 573 K range, and upon 600 s post-implantation thermal annealings at temperatures from 673 to 1073 K. The samples were analyzed by Rutherford back scattering/channeling spectrometry, elastic recoil detection analysis and transmission electron microscopy. The results obtained show that the microstructure characteristics of the bubble systems, as well as their thermal evolution behavior, depend significantly on the implantation temperature. A correlation between the dynamic annealing behavior and the bubble formation process is proposed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：756 / 760

页数：5

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