Growth of self-aligned crystalline cobalt silicide nanostructures from Co nanoparticles

被引:16
作者
Carter, JD [1 ]
Cheng, GJ [1 ]
Guo, T [1 ]
机构
[1] Univ Calif Davis, Dept Chem, Davis, CA 95616 USA
关键词
D O I
10.1021/jp0499326
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have developed a new method with which we can for the first time produce self-aligned cobalt silicide (CoSi2) nanostructures from Co nanoparticles. These nanostructures are formed by reacting Co nanoparticles with Si substrates at 900degreesC. Their dimensions are normally 3 to 10 nm wide and up to a few micrometers long. The orientations of these nanostructures are controlled by the crystalline substrate, as they are orthogonally and hexagonally aligned on Si(100) and Si(111), respectively. Because these self-aligned nanostructures (SAN) are thermally stable up to 1000degreesC in air and chemically inert to prolonged treatment with strong acids, and because their sizes are uniform and much smaller than those made from lithography, they can be ideal materials for making components such as electric contacts, interconnects, and gates for future nanoelectronics.
引用
收藏
页码:6901 / 6904
页数:4
相关论文
共 25 条
[1]   Structural relationship of polycrystalline cobalt silicide lines to (001) silicon substrate and their thermal stability [J].
Alberti, A ;
La Via, F ;
Spinella, C ;
Rimini, E .
MICROELECTRONIC ENGINEERING, 2001, 55 (1-4) :163-169
[2]   Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001) [J].
Chen, Y ;
Ohlberg, DAA ;
Medeiros-Ribeiro, G ;
Chang, YA ;
Williams, RS .
APPLIED PHYSICS LETTERS, 2000, 76 (26) :4004-4006
[3]   Nitride-mediated epitaxy of CoSi2 on Si(001) [J].
Chong, RKK ;
Yeadon, M ;
Choi, WK ;
Stach, EA ;
Boothroyd, CB .
APPLIED PHYSICS LETTERS, 2003, 82 (12) :1833-1835
[4]   Co silicide formation on SiGeC/Si and SiGe/Si layers [J].
Donaton, RA ;
Maex, K ;
Vantomme, A ;
Langouche, G ;
Morciaux, Y ;
StAmour, A ;
Sturm, JC .
APPLIED PHYSICS LETTERS, 1997, 70 (10) :1266-1268
[5]   Polycrystalline silicon/CoSi2 Schottky diode with integrated SiO2 antifuse:: a nonvolatile memory cell [J].
Herner, SB ;
Mahajani, M ;
Konevecki, M ;
Kuang, E ;
Radigan, S ;
Dunton, SV .
APPLIED PHYSICS LETTERS, 2003, 82 (23) :4163-4165
[6]   Chemistry and physics in one dimension: Synthesis and properties of nanowires and nanotubes [J].
Hu, JT ;
Odom, TW ;
Lieber, CM .
ACCOUNTS OF CHEMICAL RESEARCH, 1999, 32 (05) :435-445
[7]  
IIJIMA S, 1993, NATURE, V364, P737
[8]   Epitaxial growth of CoSi2 on hydrogen-terminated Si(001) [J].
Ishida, K ;
Miura, Y ;
Hirose, K ;
Harada, S ;
Narusawa, T .
APPLIED PHYSICS LETTERS, 2003, 82 (12) :1842-1844
[9]   Energetics of ultrathin COSi2 film on a Si(001) surface [J].
Kang, BS ;
Oh, SK ;
Kang, HJ ;
Sohn, KS .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (02) :67-76
[10]   Epitaxial CoSi2-nanostructures:: an approach to Si nanoelectronics [J].
Kluth, P ;
Zhao, QT ;
Winnerl, S ;
Lenk, S ;
Mantl, S .
MICROELECTRONIC ENGINEERING, 2002, 64 (1-4) :163-171