Hardness and fracture toughness of bulk single crystal gallium nitride

被引：130

作者：

Drory, MD

Ager, JW

Suski, T

Grzegory, I

Porowski, S

机构：

[1] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT SCI,CTR ADV MAT,BERKELEY,CA 94720

[2] POLISH ACAD SCI,UNIPRESS,PL-01142 WARSAW,POLAND

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 26期

关键词：

D O I：

10.1063/1.117865

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Basic mechanical properties of single crystal gallium nitride are measured. A Vickers (diamond) indentation method was used to determine the hardness and fracture toughness under an applied load of 2N. The average hardness was measured as 12+/-2 GPa and the average fracture toughness was measured as 0.79+/-0.10 MPa root m. These values are consistent with the properties of brittle ceramic materials and about twice the values for GaAs. A methodology for examining fracture problems in GaN is discussed. (C) 1996 American Institute of Physics.

引用

页码：4044 / 4046

页数：3

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