Room-temperature continuous wave operation of all-AlGaAs visible (similar to 700nm) vertical-cavity surface emitting lasers

被引：3

作者：

Hou, HQ

Crawford, MH

Hickman, RJ

Hammons, BE

机构：

[1] Sandia National Laboratories, MS 0603, Albuquerque

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 21期

关键词：

vertical cavity surface emitting lasers; visible semiconductor lasers;

D O I：

10.1049/el:19961337

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors present the first demonstration of the room-temperature continuous-wave operation of AlGaAs quantum well red (similar to 700nm) vertical-cavity surface emitting lasers fabricated by the selective oxidation process. The threshold current is similar to 3.2mA with an output power of up to 44 mu W. The laser structures, containing five Al0.24Ga0.76As quantum wells, were grown on GaAs (311)A substrates by metal organic vapour phase epitaxy.

引用

页码：1986 / 1987

页数：2

共 8 条

[1] EFFECTS OF SUBSTRATE MISORIENTATION ON INCORPORATION OF AMBIENT OXYGEN AND INTERFACIAL ROUGHNESS IN ALGAAS/GAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].