CHARACTERIZATION OF INGAAS/GAAS STRAINED-LAYER QUANTUM-WELLS GROWN ON (311)A GAAS SUBSTRATES

被引：11

作者：

TAKAHASHI, M

VACCARO, P

FUJITA, K

WATANABE, T

机构：

[1] ATR Optical and Radio Communication Research Laboratories, Soraku-gun, Kyoto 619-02, 2-2 Hikaridai, Seika-cho

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 01期

关键词：

D O I：

10.1063/1.114157

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fundamental properties of In0.2Ga0.8As/GaAs strained-layer quantum-wells (QWs) grown on (311)A GaAs substrates were studied. The radiative and nonradiative recombination rates as a function of temperature were obtained from the photoluminescence (PL) spectra and the time-resolved PL measurements. The radiative recombination rate is enhanced in (311)-oriented QW structures as compared to (100)-oriented ones. We fabricated graded-index separate-confinement heterostructure double quantum-well lasers on (311)A GaAs substrates. We demonstrate the low threshold current density of 360 A/cm2 for a 1.17 mm long laser at room temperature.© 1995 American Institute of Physics.

引用

页码：93 / 95

页数：3

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