Scanning tunneling microscopy study of InP(100)-(2x4): An exception to the dimer model

被引：84

作者：

MacPherson, CD ^{[1
]}

Wolkow, RA ^{[1
]}

Mitchell, CEJ ^{[1
]}

McLean, AB ^{[1
]}

机构：

[1] QUEENS UNIV,DEPT PHYS,KINGSTON,ON K7L 3N6,CANADA

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.77.691

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the first atomic resolution scanning tunneling microscopy images of the InP(100)-(2 x 4) surface. High resolution images were obtained for both occupied and unoccupied states. The x4 periodicity is due to missing rows, and the x2 periodicity to the repetition of what appear to be trimer units. It is demonstrated that the images are inconsistent with dimer-based models proposed for related semiconductor surfaces such as GaAs.

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页码：691 / 694

页数：4

相关论文

共 26 条

[1] THERMAL-STABILITY OF SULFUR PASSIVATED INP(100)-(1X1) [J].

ANDERSON, GW ;

HANF, MC ;

NORTON, PR ;

LU, ZH ;

GRAHAM, MJ .

APPLIED PHYSICS LETTERS, 1994, 65 (02) :171-173

[2] THE AS-TERMINATED RECONSTRUCTIONS FORMED BY GAAS(001) - A SCANNING-TUNNELING-MICROSCOPY STUDY OF THE (2X4) AND C(4X4) SURFACES [J].

AVERY, AR ;

HOLMES, DM ;

SUDIJONO, J ;

JONES, TS ;

JOYCE, BA .

SURFACE SCIENCE, 1995, 323 (1-2) :91-101

[3] RECONSTRUCTIONS OF GAAS(1BAR1BAR1BAR) SURFACES OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].

BIEGELSEN, DK ;

BRINGANS, RD ;

NORTHRUP, JE ;

SWARTZ, LE .

PHYSICAL REVIEW LETTERS, 1990, 65 (04) :452-455

[4] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].

BIEGELSEN, DK ;

BRINGANS, RD ;

NORTHRUP, JE ;

SWARTZ, LE .

PHYSICAL REVIEW B, 1990, 41 (09) :5701-5706

[5] ATOM-RESOLVED IMAGING AND SPECTROSCOPY ON THE GAAS(001) SURFACE USING TUNNELING MICROSCOPY [J].

BRESSLERHILL, V ;

WASSERMEIER, M ;

POND, K ;

MABOUDIAN, R ;

BRIGGS, GAD ;

PETROFF, PM ;

WEINBERG, WH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1881-1885

[6] SURFACE ATOMIC-STRUCTURE OF THE GAAS(001)(2X4) RECONSTRUCTION [J].

BROEKMAN, L ;

LECKEY, R ;

RILEY, J ;

USHER, B ;

SEXTON, B .

SURFACE SCIENCE, 1995, 331 :1115-1121

[7] ATOMIC-STRUCTURE OF GAAS(100)-(2X1) AND GAAS(100)-(2X4) RECONSTRUCTED SURFACES [J].

CHADI, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :834-837

[8] BONDING DIRECTION AND SURFACE-STRUCTURE ORIENTATION ON GAAS (001) [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :2841-2843

[9] SURFACE-STRUCTURES OF TETRAHEDRALLY COORDINATED SEMICONDUCTORS - PRINCIPLES, PRACTICE, AND UNIVERSALITY [J].

DUKE, CB .

APPLIED SURFACE SCIENCE, 1993, 65-6 :543-552

[10] MOLECULAR-BEAM EPITAXY GROWTH MECHANISMS ON GAAS(100) SURFACES [J].

FARRELL, HH ;

HARBISON, JP ;

PETERSON, LD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1482-1489