Electrodeposition of In+As thin film alloys and their conversion to InAsxP1-x by PH3 treatment

被引：9

作者：

Dalchiele, E

Cattarin, S

Musiani, M

Casellato, U

Guerriero, P

Rossetto, G

机构：

[1] INST FIS,FAC INGN,MONTEVIDEO 11000,URUGUAY

[2] CNR,IPELP,I-35127 PADUA,ITALY

[3] CNR,ICTIMA,I-35127 PADUA,ITALY

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1996年 / 418卷 / 1-2期

关键词：

indium; arsenic; In + As alloys; thin films; electrodeposition;

D O I：

10.1016/S0022-0728(96)04776-6

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The codeposition of In+As alloys has been investigated as a preliminary step for the preparation of thin polycrystalline InAs and InAsxP1-x films. Alloys of composition ranging from large excess In to excess As could be obtained by a suitable choice of bath and deposition conditions. Stoichiometric 1:1 deposits have been converted to InAs by simple thermal treatment. In+As alloys with excess In annealed under PH3 flow resulted in deposits consisting of two phases, an InAsxP1-x phase with x in the range 0.25 to 1 and and almost pure InP. Photoelectrochemical investigations showed that only the latter species was photoactive.

引用

页码：83 / 89

页数：7

共 29 条

[1] DEPOSITION OF EPITAXIAL INASXP(1-X) ON GAAS AND GAP SUBSTRATES [J].