Measurement of 1/f noise and its application in materials science

被引:86
作者
Raychaudhuri, AK [1 ]
机构
[1] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India
关键词
D O I
10.1016/S1359-0286(02)00025-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This is a review of the measurement of I If noise in certain classes of materials which have a wide range of potential applications. This includes metal films, semi-conductors, metallic oxides and inhomogeneous systems such as composites. The review contains a basic introduction to this field, the theories and models and follows it up with a discussion on measurement methods. There are discussions on specific examples of the application of noise spectroscopy in the field of materials science. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:67 / 85
页数:19
相关论文
共 115 条
[21]   Study of 1/f noise in InP grown by CBE [J].
Chen, XY ;
Leys, MR .
SOLID-STATE ELECTRONICS, 1996, 39 (08) :1149-1153
[22]   1/f noise in delta-doped GaAs analyzed in terms of mobility fluctuations [J].
Chen, XY ;
Koenraad, PM ;
Hooge, FN ;
Wolter, JH ;
Aninkevicius, V .
PHYSICAL REVIEW B, 1997, 55 (08) :5290-5296
[23]   The temperature dependence of 1/f noise in InP [J].
Chen, XY ;
Hooge, FN ;
Leys, MR .
SOLID-STATE ELECTRONICS, 1997, 41 (09) :1269-1275
[24]   DEPENDENCE OF ELECTROMIGRATION NOISE ON GEOMETRICAL AND STRUCTURAL CHARACTERISTICS IN ALUMINUM-BASED RESISTORS [J].
CHICCA, S ;
CIOFI, C ;
DILIGENTI, A ;
NANNINI, A ;
NERI, B .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (11) :2173-2175
[25]   Noise characteristics of, radio frequency sputtered amorphous silicon carbide films [J].
Choi, WK ;
Han, LJ ;
Chua, LG .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (09) :5057-5059
[26]   1/F NOISE IN ION-IMPLANTED RESISTORS BETWEEN 77-K AND 300-K [J].
CLEVERS, RHM .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) :1877-1881
[27]   VOLUME AND TEMPERATURE-DEPENDENCE OF THE 1/F NOISE PARAMETER-ALPHA IN SI [J].
CLEVERS, RHM .
PHYSICA B, 1989, 154 (02) :214-224
[28]   SEMICONDUCTOR IMPURITY ANALYSIS FROM LOW-FREQUENCY NOISE SPECTRA [J].
COPELAND, JA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (01) :50-&
[29]   Low-frequency noise in n-GaN [J].
D'Yakonova, NV ;
Levinshtein, ME ;
Contreras, S ;
Knap, W ;
Beaumont, B ;
Gibart, P .
SEMICONDUCTORS, 1998, 32 (03) :257-260
[30]  
DAYALSINGH HM, 1995, MATER RES SOC S P, V377, P577