The temperature dependence of 1/f noise in InP

被引：10

作者：

Chen, XY ^{[1
]}

Hooge, FN ^{[1
]}

Leys, MR ^{[1
]}

机构：

[1] EINDHOVEN UNIV TECHNOL,DEPT PHYS,NL-5600 MB EINDHOVEN,NETHERLANDS

来源：

SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 09期

关键词：

D O I：

10.1016/S0038-1101(97)00059-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Noise spectra were measured on CBE grown InP samples in the frequency range from 1 Hz to 10(4) kHz at temperatures from 77 to 500 K. The experimental results show that 1/f noise stems from the lattice scattering. The 1/f noise in InP is well characterised by a parameter alpha(Latt) in this temperature range. The temperature dependence of alpha(Latt) was determined experimentally. Assuming that the number of phonons in a mode fluctuates with a 1/f spectrum, we are able to derive a theoretical expression for alpha(Latt) in terms of the contributions by the acoustic phonons and the polar optical phonons. At low temperatures (< 200 K), the temperature dependence of alpha(Latt) can be analysed by this model with two kinds of phonons. However, at temperatures above 200 K, the model does not lead to satisfactory results. (C) 1997 Elsevier Science Ltd.

引用

页码：1269 / 1275

页数：7

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