Thermoelectric Properties of Directionally Solidified Half-Heusler (M 0.5 a ,M 0.5 b )NiSn (Ma, Mb = Hf, Zr, Ti) Alloys

被引：68

作者：

Kimura, Yoshisato ^{[1
]}

Ueno, Hazuki ^{[1
]}

Mishima, Yoshinao ^{[1
]}

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Dept Mat Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2009年 / 38卷 / 07期

关键词：

Half-Heusler compounds; crystal growth by directional solidification; thermoelectric generation; solid-solution effect; phase separation; LATTICE THERMAL-CONDUCTIVITY; ZRNISN; SUBSTITUTION; TEMPERATURE; TINISN; NI;

D O I：

10.1007/s11664-009-0710-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To evaluate the effect of the substitution of the M-site atoms Ti, Zr, and Hf on thermoelectric properties, nearly single-phase (M (0.5) (a) ,M (0.5) (b) )NiSn alloys (M-a, M-b = Hf, Zr, Ti) were fabricated by directional solidification. The lattice thermal conductivity can be most effectively reduced in the (Ti-0.5,Hf-0.5)NiSn alloy, probably due to the solid-solution effect, since the difference in atomic size and atomic mass are maximized between Ti and Hf. Moreover, we have found the phase separation between Ti-rich and Ti-poor half-Heusler phases in (Ti-0.5,Hf-0.5)NiSn and (Ti-0.5,Zr-0.5)NiSn alloys through observation of microstructure, chemical concentration measurement, and x-ray diffractometry.

引用

页码：934 / 939

页数：6

共 16 条

[1] LATTICE THERMAL CONDUCTIVITY OF DISORDERED SEMICONDUCTOR ALLOYS AT HIGH TEMPERATURES [J].