Dielectrophoretic assembly and characterization of individually suspended Ag, GaN, SnO2 and Ga2O3 nanowires

被引：25

作者：

Seo, Hee Won

Han, Chang-Soo ^{[1
]}

Hwang, Sun Oh

Park, Jeunghee

机构：

[1] Korea Inst Machinery & Mat, NanoMech Syst Res Ctr, Taejon 305343, South Korea

[2] Korea Univ, Dept Mat Chem, Jochiwon 339700, South Korea

来源：

NANOTECHNOLOGY | 2006年 / 17卷 / 14期

关键词：

D O I：

10.1088/0957-4484/17/14/008

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report the assembly and characterization of individually suspended Ag, GaN, SnO2, andGa(2)O(3) nanowires (NWs) using dielectrophoresis. The four kinds of NWs were individually assembled using an experimental approach based on the dielectrophoretic force equation. To freely suspend the individual NWs, we controlled the thickness of the bottom electrode. After depositing a Pt top electrode using a focused ion beam, we investigated the I-V curves of NW devices according to the change in the bottom electrode metal as well as the free suspension height from the insulator. We found that their conductivity for four kinds of NWs was remarkably increased along with the increase in the suspension height, while the gate effect in GaN was reduced.

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收藏

页码：3388 / 3393

页数：6

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