Origin of the optical anisotropy of GaAs (001)

被引：35

作者：

Berkovits, VL

Chiaradia, P

Paget, D ^{[1
]}

Gordeeva, AB

Goletti, C

机构：

[1] Ecole Polytech, Lab PMC, F-91128 Palaiseau, France

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] Univ Roma Tor Vergata, Dipartimento Fis, I-00173 Rome, Italy

[4] Univ Roma Tor Vergata, INFM, Rome, Italy

来源：

SURFACE SCIENCE | 1999年 / 441卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

gallium arsenide; reflection spectroscopy;

D O I：

10.1016/S0039-6028(99)00779-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present a detailed experimental investigation of the room temperature optical anisotropy of clean GaAs(001) surfaces, and of the change of this anisotropy after exposure to oxygen. On the As-rich (2 x 4) surface, this anisotropy consists of two main signals, situated, respectively, near 3 and 4.5 eV. The results, together with the analysis of the anisotropy of Ga1-xAlxAs, lead us to the conclusion that the anisotropy near 3 eV originates mainly from localized states related to surface dimers. However, the anisotropy near 4.5 eV is related to bulk-like optical transitions, since this anisotropy is chemically insensitive, and since its spectral shape is similar to that of the bulk dielectric constant. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：26 / 32

页数：7

共 22 条

[1] ANALYSIS OF MODULATION SPECTRA OF STRATIFIED MEDIA [J].