Simple method for synthesis of silicon nanowire: Pulsed laser deposition in furnace from p-Si wafer target

被引：7

作者：

Jeon, Kyung Ah ^{[1
]}

Kim, Jong Hoon ^{[1
]}

Lee, Sang Yeol ^{[1
]}

机构：

[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea

来源：

PROGRESS IN SOLID STATE CHEMISTRY | 2005年 / 33卷 / 2-4期

关键词：

D O I：

10.1016/j.progsolidstchem.2005.11.018

中图分类号：

O61 [无机化学];

学科分类号：

070301 [无机化学]; 081704 [应用化学];

摘要：

Si nanowires (NWs) were fabricated in a vacuum furnace using a Nd:YAG pulsed laser with the wavelength of 325 nm. Commercial p-type Si wafer is used for the target, and no catalytic materials are used. Scanning electron microscopy (SEM) images indicate that the diameters of Si NWs ranged from 10 to 150 nm. Si NWs have various sizes and shapes with a substrate position inside the furnace, and their morphologic construction is reproducible. The formation mechanism of the NWs is discussed. (C) 2005 Elsevier Ltd. All rights reserved.

引用

页码：107 / 112

页数：6

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