Improvement of the electrical properties of β-FeSi2 films on Si (001) by high-temperature annealing

被引：29

作者：

Takakura, K ^{[1
]}

Suemasu, T ^{[1
]}

Hiroi, N ^{[1
]}

Hasegawa, F ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 3AB期

关键词：

iron disilicide; reactive deposition epitaxy (RDE); mobility; high-temperature annealing;

D O I：

10.1143/JJAP.39.L233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The crystal quality, mobility and carrier density of the continuous and [100]-oriented nondoped beta-FeSi2 films prepared from Si/Fe multilayers on Si (001) substrates using templates were improved by high-temperature annealing, in particular, at 900 degrees C. All the annealed samples exhibited n-type conduction. The maximum electron mobility of beta-FeSi2 indicated 6900 cm(2)/V.s (46 K) after annealing at 900 degrees C for 42 h. This mobility is about 15 times higher than that reported so far for nondoped n-type beta-FeSi2. The electron density at room temperature decreased from 2 x 10(20) cm(-3) to 3 x 10(18) cm-3 after the annealing.

引用

页码：L233 / L236

页数：4

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