PHOTOELECTRIC STUDY OF BETA-FESI2 ON SILICON - OPTICAL-THRESHOLD AS A FUNCTION OF TEMPERATURE

被引：80

作者：

LEFKI, K ^{[1
]}

MURET, P ^{[1
]}

机构：

[1] CNRS,ETUD PROPRIETES ELECTR SOLIDES LAB,F-38042 GRENOBLE,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 02期

关键词：

D O I：

10.1063/1.354939

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Investigation of the photoelectric properties of several metal/beta-FeSi2/Si heterostructures is presented. For thin silicide samples (200 angstrom), the photocurrent follows a Fowler's law with a threshold PHI1 lower than the silicide band gap E(g). For thicker silicide samples (2500 angstrom), the behavior of the photocurrent is different because the optical absorption within the silicide can no longer be neglected: a maximum of the photocurrent is observed Instead at E(g). The variations of E(g) and PHI1 with temperature are compellingly similar and show the strong effect of the electron-phonon coupling. We suggest that the threshold PHI1 corresponds to transitions between a trap localized near the heterojunction and the silicide conduction band.

引用

页码：1138 / 1142

页数：5

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