共 33 条
- [25] ULTRAFAST LASER-INDUCED ORDER-DISORDER TRANSITIONS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1995, 51 (20): : 14186 - 14198
- [26] Spaepen F., 1982, Laser annealing of semiconductors, P15
- [27] THEORY FOR THE INSTABILITY OF THE DIAMOND STRUCTURE OF SI, GE, AND C INDUCED BY A DENSE ELECTRON-HOLE PLASMA [J]. PHYSICAL REVIEW B, 1990, 42 (11): : 7163 - 7173
- [28] DYNAMIC THEORY OF THE LASER-INDUCED LATTICE INSTABILITY OF SILICON [J]. PHYSICAL REVIEW B, 1992, 46 (17): : 10686 - 10692
- [29] TIME-DEPENDENCE OF THE LASER-INDUCED FEMTOSECOND LATTICE INSTABILITY OF SI AND GAAS - ROLE OF LONGITUDINAL OPTICAL DISTORTIONS [J]. PHYSICAL REVIEW B, 1994, 49 (11): : 7299 - 7305
- [30] TIME-RESOLVED STUDY OF LASER-INDUCED DISORDER OF SI SURFACES [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (14) : 1438 - 1441