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Thickness-dependent structural transitions in fluorinated copper-phthalocyanine (F16CuPc) films
被引:102
作者
:
de Oteyza, Dimas G.
论文数:
0
引用数:
0
h-index:
0
机构:
Max Planck Inst Met Res, D-70569 Stuttgart, Germany
de Oteyza, Dimas G.
Barrena, Esther
论文数:
0
引用数:
0
h-index:
0
机构:
Max Planck Inst Met Res, D-70569 Stuttgart, Germany
Barrena, Esther
Osso, J. Oriol
论文数:
0
引用数:
0
h-index:
0
机构:
Max Planck Inst Met Res, D-70569 Stuttgart, Germany
Osso, J. Oriol
Sellner, Stefan
论文数:
0
引用数:
0
h-index:
0
机构:
Max Planck Inst Met Res, D-70569 Stuttgart, Germany
Sellner, Stefan
Dosch, Helmut
论文数:
0
引用数:
0
h-index:
0
机构:
Max Planck Inst Met Res, D-70569 Stuttgart, Germany
Dosch, Helmut
机构
:
[1]
Max Planck Inst Met Res, D-70569 Stuttgart, Germany
[2]
Univ Stuttgart, Inst Theoret & Angew Phys, D-70550 Stuttgart, Germany
[3]
Inst Ciencia Mat Barcelona, CSIC, Bellaterra 08193, Spain
来源
:
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
|
2006年
/ 128卷
/ 47期
关键词
:
D O I
:
10.1021/ja064641r
中图分类号
:
O6 [化学];
学科分类号
:
0703 ;
摘要
:
The detailed structure of F16CuPc films on SiO2 has been determined by means of in situ grazing incidence X-ray diffraction from the first monolayer to thicker films. In contrast to films of the homologous H16CuPc molecule, the F16CuPc films exhibit the same structure independently from the deposition temperature. The films show a thickness-dependent polymorphism manifested in the in-plane crystal structure, which implies large differences in the molecular tilt within the cofacial stacking of the molecules. Copyright © 2006 American Chemical Society.
引用
收藏
页码:15052 / 15053
页数:2
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Structural rearrangements during the initial growth stages of organic thin films of F16CuPc on SiO2
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Thorpe, SC
[J].
JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS,
1998,
94
(20):
: 3155
-
3159
[3]
Studies on phase transformations of Cu-phthalocyanine thin films
Berger, O
论文数:
0
引用数:
0
h-index:
0
机构:
Dresden Univ Technol, Semicond & Microsyst Technol Lab, D-8027 Dresden, Germany
Dresden Univ Technol, Semicond & Microsyst Technol Lab, D-8027 Dresden, Germany
Berger, O
Fischer, WJ
论文数:
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引用数:
0
h-index:
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机构:
Dresden Univ Technol, Semicond & Microsyst Technol Lab, D-8027 Dresden, Germany
Fischer, WJ
Adolphi, B
论文数:
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引用数:
0
h-index:
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机构:
Dresden Univ Technol, Semicond & Microsyst Technol Lab, D-8027 Dresden, Germany
Adolphi, B
Tierbach, S
论文数:
0
引用数:
0
h-index:
0
机构:
Dresden Univ Technol, Semicond & Microsyst Technol Lab, D-8027 Dresden, Germany
Tierbach, S
Melev, V
论文数:
0
引用数:
0
h-index:
0
机构:
Dresden Univ Technol, Semicond & Microsyst Technol Lab, D-8027 Dresden, Germany
Melev, V
论文数:
引用数:
h-index:
机构:
Schreiber, J
[J].
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,
2000,
11
(04)
: 331
-
346
[4]
Large-scale complementary integrated circuits based on organic transistors
Crone, B
论文数:
0
引用数:
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h-index:
0
机构:
Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
Crone, B
Dodabalapur, A
论文数:
0
引用数:
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h-index:
0
机构:
Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
Dodabalapur, A
Lin, YY
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
Lin, YY
Filas, RW
论文数:
0
引用数:
0
h-index:
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机构:
Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
Filas, RW
Bao, Z
论文数:
0
引用数:
0
h-index:
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机构:
Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
Bao, Z
LaDuca, A
论文数:
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引用数:
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h-index:
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机构:
Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
LaDuca, A
Sarpeshkar, R
论文数:
0
引用数:
0
h-index:
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机构:
Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
Sarpeshkar, R
Katz, HE
论文数:
0
引用数:
0
h-index:
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机构:
Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
Katz, HE
Li, W
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
Li, W
[J].
NATURE,
2000,
403
(6769)
: 521
-
523
[5]
Controlled enhancement of the electron field-effect mobility of F16CuPc thin-film transistors by use of functionalized SiO2 substrates -: art. no. 183504
de Oteyza, DG
论文数:
0
引用数:
0
h-index:
0
机构:
Max Planck Inst Met Res, D-70569 Stuttgart, Germany
Max Planck Inst Met Res, D-70569 Stuttgart, Germany
de Oteyza, DG
Barrena, E
论文数:
0
引用数:
0
h-index:
0
机构:
Max Planck Inst Met Res, D-70569 Stuttgart, Germany
Barrena, E
Ossó, JO
论文数:
0
引用数:
0
h-index:
0
机构:
Max Planck Inst Met Res, D-70569 Stuttgart, Germany
Ossó, JO
Dosch, H
论文数:
0
引用数:
0
h-index:
0
机构:
Max Planck Inst Met Res, D-70569 Stuttgart, Germany
Dosch, H
Meyer, S
论文数:
0
引用数:
0
h-index:
0
机构:
Max Planck Inst Met Res, D-70569 Stuttgart, Germany
Meyer, S
论文数:
引用数:
h-index:
机构:
Pflaum, J
[J].
APPLIED PHYSICS LETTERS,
2005,
87
(18)
: 1
-
3
[6]
Structural rearrangements during the initial growth stages of organic thin films of F16CuPc on SiO2
de Oteyza, Dimas G.
论文数:
0
引用数:
0
h-index:
0
机构:
Max Planck Inst Met Res, D-70569 Stuttgart, Germany
de Oteyza, Dimas G.
Barrena, Esther
论文数:
0
引用数:
0
h-index:
0
机构:
Max Planck Inst Met Res, D-70569 Stuttgart, Germany
Max Planck Inst Met Res, D-70569 Stuttgart, Germany
Barrena, Esther
Sellner, Stefan
论文数:
0
引用数:
0
h-index:
0
机构:
Max Planck Inst Met Res, D-70569 Stuttgart, Germany
Sellner, Stefan
Osso, J. Oriol
论文数:
0
引用数:
0
h-index:
0
机构:
Max Planck Inst Met Res, D-70569 Stuttgart, Germany
Osso, J. Oriol
Dosch, Helmut
论文数:
0
引用数:
0
h-index:
0
机构:
Max Planck Inst Met Res, D-70569 Stuttgart, Germany
Dosch, Helmut
[J].
JOURNAL OF PHYSICAL CHEMISTRY B,
2006,
110
(33)
: 16618
-
16623
[7]
The path to ubiquitous and low-cost organic electronic appliances on plastic
Forrest, SR
论文数:
0
引用数:
0
h-index:
0
机构:
Princeton Univ, Dept Elect Engn, Princeton Inst Sci & Technol Mat, Princeton, NJ 08544 USA
Princeton Univ, Dept Elect Engn, Princeton Inst Sci & Technol Mat, Princeton, NJ 08544 USA
Forrest, SR
[J].
NATURE,
2004,
428
(6986)
: 911
-
918
[8]
Organic thin film transistors: From theory to real devices
Horowitz, G
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Paris 07, CNRS, UMR 7086, ITODYS, F-75005 Paris, France
Univ Paris 07, CNRS, UMR 7086, ITODYS, F-75005 Paris, France
Horowitz, G
[J].
JOURNAL OF MATERIALS RESEARCH,
2004,
19
(07)
: 1946
-
1962
[9]
Recent advances in semiconductor performance and printing processes for organic transistor-based electronics
Katz, HE
论文数:
0
引用数:
0
h-index:
0
机构:
Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA
Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA
Katz, HE
[J].
CHEMISTRY OF MATERIALS,
2004,
16
(23)
: 4748
-
4756
[10]
Introduction to organic thin film transistors and design of n-channel organic semiconductors
Newman, CR
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
Newman, CR
Frisbie, CD
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
Frisbie, CD
da Silva, DA
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
da Silva, DA
Brédas, JL
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
Brédas, JL
Ewbank, PC
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
Ewbank, PC
Mann, KR
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
Mann, KR
[J].
CHEMISTRY OF MATERIALS,
2004,
16
(23)
: 4436
-
4451
←
1
2
→