Surface roughness and island formation effects in ARXPS quantification

被引:34
作者
Martín-Concepción, AI
Yubero, F
Espinós, JP
Tougaard, S
机构
[1] Univ Sevilla, CSIC, Inst Ciencia Mat, E-41092 Seville, Spain
[2] Univ So Denmark, Inst Phys, DK-5230 Odense M, Denmark
关键词
ARXPS; quantitative XPS; surface roughness; ZnO; island growth;
D O I
10.1002/sia.1765
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Quantification of surface nano-structures by angle-resolved XPS (ARXPS) is straightforward and works quite reliably for perfectly flat surfaces of amorphous materials. For rough surfaces, the interpretation of ARXPS is, however, complicated because the angular variation of the XPS peak intensity depends on the surface roughness. Even for ideally flat substrates, ARXPS analysis of laterally inhomogeneous surface structures grown on the surface is quite complex. The reason is that neighboring nano-clusters shadow the XPS peak intensity. The effect depends on cluster shape as well as the distribution of clusters on the surface. In addition the effects depend on the flatness of the underlying substrate. The interpretation of ARXPS then becomes quite complex. In the present paper, we have studied this problem by analyzing ZnO nano-clusters grown on substrates of SiO2 and Al2O3. Thus we compared the results of quantification by the four techniques: ARXPS, XPS-peak shape analysis, Rutherford backscattering spectroscopy and x-ray fluorescence spectrometry. While the latter three techniques gave consistent results, the results of the ARXPS analysis were way off. This deviation is discussed in terms of the above-mentioned shadowing effect of neighboring clusters as well as roughness of the underlying substrates. Different normalization methods in the ARXPS analysis procedure are compared and it is found that some of the observed problems for the substrate peaks (but not for the peaks from the overlayer film) can be reduced by applying reference samples with similar roughness for normalization of the data. In conclusion, the ARXPS technique is very much dependent on surface roughness as well as on the morphology of the thin films. Thus for reliable quantification with ARXPS it is necessary to have independent knowledge on surface roughness as well as the distribution of islands of the thin films. Copyright (C) 2004 John Wiley Sons, Ltd.
引用
收藏
页码:788 / 792
页数:5
相关论文
共 17 条
[1]   ANGLE-RESOLVED XPS AND AES - DEPTH-RESOLUTION LIMITS AND A GENERAL COMPARISON OF PROPERTIES OF DEPTH-PROFILE RECONSTRUCTION METHODS [J].
CUMPSON, PJ .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1995, 73 (01) :25-52
[2]   SURFACE ANALYSIS AND ANGULAR-DISTRIBUTIONS IN X-RAY PHOTOELECTRON-SPECTROSCOPY [J].
FADLEY, CS ;
BAIRD, RJ ;
SIEKHAUS, W ;
NOVAKOV, T ;
BERGSTROM, SA .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 4 (02) :93-137
[3]   DETERMINATION OF OVERLAYER THICKNESS BY ANGLE-RESOLVED XPS - A COMPARISON OF ALGORITHMS [J].
FULGHUM, JE .
SURFACE AND INTERFACE ANALYSIS, 1993, 20 (02) :161-173
[4]   THICKNESS DETERMINATION OF UNIFORM OVERLAYERS ON ROUGH SUBSTRATES BY ANGLE-DEPENDENT XPS [J].
GUNTER, PLJ ;
NIEMANTSVERDRIET, JW .
APPLIED SURFACE SCIENCE, 1995, 89 (01) :69-76
[5]   QUANTITATIVE SURFACE-ANALYSIS OF LAYERED MATERIALS [J].
HOLLOWAY, PH ;
BUSSING, TD .
SURFACE AND INTERFACE ANALYSIS, 1992, 18 (04) :251-256
[6]   Overlayer thickness determination by angular dependent X-ray photoelectron spectroscopy (ADXPS) of rough surfaces with a spherical topography [J].
Kappen, P ;
Reihs, K ;
Seidel, C ;
Voetz, M ;
Fuchs, H .
SURFACE SCIENCE, 2000, 465 (1-2) :40-50
[7]   Determination of amount of substance for nanometrethin deposits:: consistency between XPS, RBS and XRF quantification [J].
Martin-Concepción, AI ;
Yubero, F ;
Espinos, JP ;
Garcia-Lopez, J ;
Tougaard, S .
SURFACE AND INTERFACE ANALYSIS, 2003, 35 (12) :984-990
[8]   X-ray photoelectron spectroscopy study of the first stages of ZnO growth and nanostructure dependence of the effects of polarization at ZnO/SiO2 and ZnO/Al2O3 interfaces [J].
Martin-Concepción, AI ;
Yubero, F ;
Espinós, JP ;
González-Elipe, AR ;
Tougaard, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (04) :1393-1398
[9]   Photoelectron elastic scattering effects in XPS [J].
Nefedov, VI .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1999, 100 :1-15
[10]   QUANTITATIVE AES AND XPS - DETERMINATION OF THE ELECTRON SPECTROMETER TRANSMISSION FUNCTION AND THE DETECTOR SENSITIVITY ENERGY DEPENDENCIES FOR THE PRODUCTION OF TRUE ELECTRON-EMISSION SPECTRA IN AES AND XPS [J].
SEAH, MP ;
SMITH, GC .
SURFACE AND INTERFACE ANALYSIS, 1990, 15 (12) :751-766