Roughness characterization in positive and negative resists

被引:21
作者
Constantoudis, V
Gogolides, E [1 ]
Tserepi, A
Diakoumakos, CD
Valamontes, ES
机构
[1] NCSR Democritos, Inst Microelect, Aghia Paraskevi 15310, Greece
[2] Natl Tech Univ Athens, Dept Phys, Athens 15780, Greece
[3] Technol Educ Inst Athens, Aegaleo 12210, Greece
关键词
metrology; roughness; fractal dimension; correlation length; resists;
D O I
10.1016/S0167-9317(02)00424-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Different roughness parameters, such as the root mean square deviation (rms or sigma), the correlation length L-cor, the fractal dimension D and the Fourier spectrum, are presented and compared. The scaling behavior of sigma determining the L-cor as well as the dependence of sigma and D on the exposure dose for two negative tone (wet- and plasma-developed) and one positive tone resist are investigated. The experimental analysis reveals an interesting interrelation (inverse behavior) between sigma and D which is not predicted by theory, and elucidates the dependence of L-cor on the exposure dose. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:793 / 801
页数:9
相关论文
共 19 条
[1]   Advanced epoxy novolac resist for fast high-resolution electron-beam lithography [J].
Argitis, P ;
Raptis, I ;
Aidinis, CJ ;
Glezos, N ;
Baciocchi, M ;
Everett, J ;
Hatzakis, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06) :3030-3034
[2]   Line edge roughness of chemically amplified resists [J].
Azuma, T ;
Chiba, K ;
Imabeppu, M ;
Kawamura, D ;
Onishi, Y .
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2, 2000, 3999 :264-269
[3]  
Barabasi A-Ls, 1995, FRACTAL CONCEPTS SUR, DOI [10.1017/CBO9780511599798, DOI 10.1017/CBO9780511599798]
[4]   EVALUATING THE FRACTAL DIMENSION OF PROFILES [J].
DUBUC, B ;
QUINIOU, JF ;
ROQUESCARMES, C ;
TRICOT, C ;
ZUCKER, SW .
PHYSICAL REVIEW A, 1989, 39 (03) :1500-1512
[5]   DYNAMIC SCALING AND PHASE-TRANSITIONS IN INTERFACE GROWTH [J].
FAMILY, F .
PHYSICA A, 1990, 168 (01) :561-580
[6]  
HASTINGS MH, 1994, FRACTALS
[7]   Process dependence of roughness in a positive-tone chemically amplified resist [J].
He, D ;
Cerrina, F .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06) :3748-3751
[8]   Area evaluation of microscopically rough surfaces [J].
Lai, L ;
Irene, EA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (01) :33-39
[9]   Evaluation of the growth behaviour of gold film surfaces evaporation-deposited on mica under different conditions [J].
Liu, ZH ;
Brown, NMD ;
McKinley, A .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1997, 9 (01) :59-71
[10]   Lithography and line-edge roughness of high activation energy resists [J].
Masuda, S ;
Ma, X ;
Noya, G ;
Pawlowski, G .
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2, 2000, 3999 :252-263