Magnetic field effects on boron-doped Si oscillators

被引：9

作者：

Biggar, RD ^{[1
]}

Parpia, JM ^{[1
]}

机构：

[1] CORNELL UNIV,CTR MAT SCI,ITHACA,NY 14853

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 21期

关键词：

D O I：

10.1103/PhysRevB.56.13638

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have measured the mechanical properties of single-crystal silicon doped with boron (acceptor) impurities. A low-temperature doping-dependent increase in dissipation is observed, accompanied by a period shift. With increasing magnetic field, the dissipation and period shift are eliminated. These results confirm an electronic origin for the dissipation, consistent with the attenuation observed elsewhere in ultrasound in boron-doped silicon.

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页码：13638 / 13641

页数：4

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