Formation of local p+ region in ZnSe by Cu3Ge contact

Cu3Ge/Pt/Au has been deposited onto the surface of p-ZnSe, n(+)-ZnSe and n-ZnSe. It was found that the observed Cu3Ge/pZnSe ohmic behaviour is due mainly to hole tunnelling through the metal/semiconductor interface. A p(+)-n junction-like I-V characteristic for Cu3Ge/n-ZnSe was also observed. Furthermore, a negative differential resistance with a peak-to-valley ratio of similar to 6 was observed under forward bias when Cu3Ge was deposited onto,n(+)-ZnSe. These observations all suggest that Cu3Ge can form a local p(+) region on the ZnSe surface.