Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon

被引：48

作者：

Mannino, G

Cowern, NEB

Roozeboom, F

van Berkum, JGM

机构：

[1] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

[2] Univ Catania, INFM, I-95129 Catania, Italy

[3] Univ Catania, Dipartimento Fis, I-95129 Catania, Italy

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 07期

关键词：

D O I：

10.1063/1.125607

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the nucleation and evolution of boron-interstitial clusters (BIC), driven by high interstitial supersaturations, S(t), during Si implant damage annealing. The BICs are "fabricated" in a narrow band by overlapping the Si implant damage tail with a lightly doped B buried layer. The BIC band is found to be a net sink for interstitials at supersaturations S(t)> 10(4). Our results suggest that silicon self-interstitial defects are the primary source of interstitials driving transient enhanced diffusion, and that BICs act as a secondary "buffer" for the interstitial supersaturation. (C) 2000 American Institute of Physics. [S0003-6951(00)03207-1].

引用

页码：855 / 857

页数：3

共 8 条

[1] The fraction of substitutional boron in silicon during ion implantation and thermal annealing [J].