Impact of technological parameters on non-stationary transport in realistic 50 nm MOSFET technology

被引：6

作者：

Munteanu, D ^{[1
]}

Le Carval, G ^{[1
]}

Guegan, G ^{[1
]}

机构：

[1] CEA Grenoble, LETI, Dept Silicon Technol, F-38054 Grenoble 9, France

来源：

SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 07期

关键词：

non-stationary effects; MOSFET technology; numerical simulation;

D O I：

10.1016/S0038-1101(02)00040-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The aim of this work is to investigate non-stationary transport effects occurring in 50 nm MOSFET technology and to provide guidelines for technology optimization in order to maximize the impact of these effects on device performances. We analyze quantitatively the real impact of technology on the needed level of accuracy for carrier transport modeling and we show which recipes must be used to evaluate the performances of advanced device architectures. The original point of this work is the investigation of technology influence on injection velocity at source side and on drain current. The results open the perspective of specific engineering of access regions in order to take full advantage of nonstationary effects on the drain current. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：1045 / 1050

页数：6

共 16 条

[1]

[Anonymous], MODULAR SERIES SOLID

[2] AN INVESTIGATION OF STEADY-STATE VELOCITY OVERSHOOT IN SILICON [J].

BACCARANI, G ;

WORDEMAN, MR .

SOLID-STATE ELECTRONICS, 1985, 28 (04) :407-416

[3] TRANSPORT EQUATIONS FOR ELECTRONS IN 2- VALLEY SEMICONDUCTORS [J].

BLOTEKJAER, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (01) :38-+

[4]

CAILLAT C, 1999 S VLSI TECHN, P89

[5] Exploration of velocity overshoot in a high-performance deep sub-0.1-μm SOI MOSFET with asymmetric channel profile [J].

Cheng, BH ;

Rao, VR ;

Woo, JCS .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (10) :538-540

[6] MONTE-CARLO ANALYSIS OF ELECTRON-TRANSPORT IN SMALL SEMICONDUCTOR-DEVICES INCLUDING BAND-STRUCTURE AND SPACE-CHARGE EFFECTS [J].

FISCHETTI, MV ;

LAUX, SE .

PHYSICAL REVIEW B, 1988, 38 (14) :9721-9745

[7]

JACOBONI C, 1983, REV MOD PHYS, V55

[8]

JUNGEMANN C, 1966, P ESSDERC, P236

[9] Potential design and transport property of 0.1-mu m MOSFET with asymmetric channel profile [J].

Odanaka, S ;

Hiroki, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (04) :595-600

[10] AN ASSESSMENT OF APPROXIMATE NONSTATIONARY CHARGE TRANSPORT MODELS USED FOR GAAS DEVICE MODELING [J].

SANDBORN, PA ;

RAO, A ;

BLAKEY, PA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (07) :1244-1253

← 1 2 →