Exploration of velocity overshoot in a high-performance deep sub-0.1-μm SOI MOSFET with asymmetric channel profile

被引：31

作者：

Cheng, BH ^{[1
]}

Rao, VR

Woo, JCS

机构：

[1] Motorola Inc, Adv Prod Res & Dev Lab, Austin, TX 78721 USA

[2] Indian Inst Technol, Dept Elect Engn, Mumbai 400076, India

[3] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 10期

关键词：

asymmetric channel profile; deep-0.1-um MOSFETs; SOI; velocity overshoot;

D O I：

10.1109/55.791935

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electron velocity overshoot phenomenon in the inversion layer is experimentally investigated using a novel thin-film silicon-on-insulator (SOI) test structure with channel lengths down to 0.08 mu m, The uniformity of the carrier density and tangential field is realized by employing a lateral asymmetric channel (LAC) profile. The electron drift velocity observed in this work is 9.5 x 10(6) cm/s for a device with L(eff) = 0.08 mu m at 300 K. The upward trend in electron velocity can be clearly noticed for decreasing channel lengths.

引用

页码：538 / 540

页数：3

共 15 条

[1] OBSERVATION OF VELOCITY OVERSHOOT IN SILICON INVERSION-LAYERS [J].

ASSADERAGHI, F ;

KO, PK ;

HU, CM .

IEEE ELECTRON DEVICE LETTERS, 1993, 14 (10) :484-486

[2] EXPERIMENTAL CHARACTERIZATION AND MODELING OF ELECTRON SATURATION VELOCITY IN MOSFETS INVERSION LAYER FROM 90 TO 350 K [J].

CHAN, TY ;

LEE, SW ;

GAW, H .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (10) :466-468

[3]

CHENG B, 1998, IEEE SOI C

[4]

CHENG B, P ESSDERC 98, P520

[5] RELATIONSHIP BETWEEN MEASURED AND INTRINSIC TRANSCONDUCTANCES OF FETS [J].

CHOU, SY ;

ANTONIADIS, DA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) :448-450

[6] VELOCITY OF SURFACE CARRIERS IN INVERSION-LAYERS ON SILICON [J].

COEN, RW ;

MULLER, RS .

SOLID-STATE ELECTRONICS, 1980, 23 (01) :35-40

[7] HIGH-FIELD DRIFT VELOCITY OF ELECTRONS AT THE SI-SIO2 INTERFACE AS DETERMINED BY A TIME-OF-FLIGHT TECHNIQUE [J].

COOPER, JA ;

NELSON, DF .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1445-1456

[8] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J].

FANG, FF ;

FOWLER, AB .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1825-+

[9]

HSIAO TC, 1997, P INT S VLSI TECHN, P95

[10] MONTE-CARLO ANALYSIS OF SEMICONDUCTOR-DEVICES - THE DAMOCLES PROGRAM [J].

LAUX, SE ;

FISCHETTI, MV ;

FRANK, DJ .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1990, 34 (04) :466-494

← 1 2 →