OBSERVATION OF VELOCITY OVERSHOOT IN SILICON INVERSION-LAYERS

被引：33

作者：

ASSADERAGHI, F

KO, PK

HU, CM

机构：

[1] Department of Electrical Engineering and Computer Sciences, University of California, Berkeley

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 10期

关键词：

D O I：

10.1109/55.244738

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Employing a novel test structure, electron velocity overshoot in silicon inversion layers is observed at room temperature. For channel lengths longer than 0.3 mum, the velocity/field relation follows the well-known behavior with no channel length dependence. The first indication of velocity overshoot is seen at channel length of 0.22 mum, while at L = 0.12 mum drift velocities up to 35% larger than the long channel value are measured.

引用

页码：484 / 486

页数：3

共 8 条

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