Characteristics of cobalt-doped zinc oxide thin films prepared by pulsed laser deposition

被引:16
作者
Kim, JH [1 ]
Lee, JB
Kim, H
Kim, D
Ihm, Y
Choo, WK
机构
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[2] Chungnam Natl Univ, Dept Mat Engn, Taejon 305764, South Korea
[3] Chungnam Natl Univ, Res Ctr Adv Magnet Mat, Taejon 305764, South Korea
关键词
diluted magnetic semiconductors; pulsed laser deposition; spin electronics; ZnCoO;
D O I
10.1109/TMAG.2002.803132
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have characterized Zn1-xCoxO thin films grown on sapphire (0001) substrates by pulsed laser deposition. We have found for x = 0.25 that inhomogeneous Zn1-xCoxO films with wurtzite ZnO phase mixed with rock-salt CoO and hexagonal Co phases are formed when the growth temperature (T-g) is relatively high (greater than or similar to600 degreesC) and the O-2 pressure (Po-2) is fairly low (less than or similar to10(-5) torr). The presence of the Co clusters leads to room temperature ferromagnetism. Homogeneous Zn1-xCoxO alloy films with wartzite structure are predominantly paramagnetic. High-quality epitaxial Zn1-xCoxO alloy Elms are formed at a growth condition of T-g = 600 degreesC and P-O2 = 10(-5) torr. Under this optimized growth condition, Co can be dissolved into ZnO up to around 40%. Photoluminescence spectra and electrical properties of Zn1-xCoxO strongly depend on the Co content.
引用
收藏
页码:2880 / 2882
页数:3
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