Unified model for short-channel poly-Si TFTs

被引:55
作者
Iñiguez, B [1 ]
Xu, Z
Fjeldly, TA
Shur, MS
机构
[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
[2] Norwegian Inst Sci & Technol, Ctr Technol, NTNU, N-2007 Kjeller, Norway
关键词
D O I
10.1016/S0038-1101(99)00142-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a new unified model for long and short-channel polysilicon thin-film transistors (poly-Si TFTs) suitable for circuit simulation. The model is based on the effective medium approximation and should be valid for transistors of channel lengths down to 1 mu m. The model accounts for field effect mobility enhancement in the moderate inversion regime and for mobility degradation at high gate voltages, for DIBL effect, kink effect, off-state current and channel-length modulation. Good agreement between the model and the measurements was found for a wide range of channel lengths. (C) 1999 Elsevier Science Ltd, All rights reserved.
引用
收藏
页码:1821 / 1831
页数:11
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