MOSFET scalability limits and "new frontier" devices

被引：38

作者：

Antoniadis, DA ^{[1
]}

机构：

[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

来源：

2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2002年

关键词：

D O I：

10.1109/VLSIT.2002.1015365

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon-based MOSFETs are scalable to gate-lengths around 10 nm but will fall well short of commensurate performance enhancement. High mobility materials and device structures that eliminate the use of doping for electrostatic control will have to be incorporated in future CMOS technologies, along with very low contact resistance processes. New frontier FETs incorporating entirely new transport principles show promise but are still far from practical implementation.

引用

页码：2 / 5

页数：4

共 33 条

[1] [Anonymous], 2001, INT TECHNOLOGY ROADM
[2] Antoniadis DA, 2001, SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001, P156
[3] Assad F., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P547, DOI 10.1109/IEDM.1999.824213
[4] Logic circuits with carbon nanotube transistors
Bachtold, A
Hadley, P
Nakanishi, T
Dekker, C
[J]. SCIENCE, 2001, 294 (5545) : 1317 - 1320
[5] 30nm physical gate length CMOS transistors with 1.0 ps n-MOS and 1.7 ps p-MOS gate delays
Chau, R
Kavalieros, J
Roberds, B
Schenker, R
Lionberger, D
Barlage, D
Doyle, B
Arghavani, R
Murthy, A
Dewey, G
[J]. INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, : 45 - 48
[6] Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates
Cheng, ZY
Currie, MT
Leitz, CW
Taraschi, G
Fitzgerald, EA
Hoyt, JL
Antoniadas, DA
[J]. IEEE ELECTRON DEVICE LETTERS, 2001, 22 (07) : 321 - 323
[7] Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates
Currie, MT
Leitz, CW
Langdo, TA
Taraschi, G
Fitzgerald, EA
Antoniadis, DA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06): : 2268 - 2279
[8] DAI H, COMMUNICATION
[9] Fang H., 1992, International Electron Devices Meeting 1992. Technical Digest (Cat. No.92CH3211-0), P621, DOI 10.1109/IEDM.1992.307437
[10] Performance degradation of small silicon devices caused by long-range Coulomb interactions
Fischetti, MV
Laux, SE
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (16) : 2277 - 2279

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