Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates

被引：70

作者：

Bour, DP ^{[1
]}

Nickel, NM ^{[1
]}

Van de Walle, CG ^{[1
]}

Kneissl, MS ^{[1
]}

Krusor, BS ^{[1
]}

Mei, P ^{[1
]}

Johnson, NM ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 16期

关键词：

D O I：

10.1063/1.126291

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the feasibility of polycrystalline nitride semiconductor light-emitting diodes (LEDs). Here, polycrystalline LEDs were deposited on quartz substrates, incorporating a layer structure identical to that used for epitaxially grown LEDs. The deposition exhibits a tendency to produce c-oriented crystallites. Violet-blue (430 nm) operation of a polycrystalline LED is demonstrated, with spectral width of 38 nm, and emission efficiency approximately two orders of magnitude lower than for single-crystal LEDs. These LEDs could potentially be incorporated in large-area displays, since the deposition of polycrystalline materials avoids single-crystal substrates required for conventional nitride semiconductor light emitters. (C) 2000 American Institute of Physics. [S0003-6951(00)02115-X].

引用

页码：2182 / 2184

页数：3

共 9 条

[1] WIDEGAP COLUMN-III NITRIDE SEMICONDUCTORS FOR UV/BLUE LIGHT-EMITTING DEVICES [J].