Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors

被引：78

作者：

Funato, M ^{[1
]}

Kotani, T

Kondou, T

Kawakami, Y

Narukawa, Y

Mukai, T

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

[2] Nichia Corp, Nitride Semicond Res Lab, Tokushima 7748601, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 26期

关键词：

D O I：

10.1063/1.2217259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A color synthesis based on InGaN/GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes is demonstrated. The microfacet structure is composed of (0001), {11 (2) over bar2}, and {11 (2) over bar0} planes, and the InGaN well thickness and composition are spatially inhomogeneous due to the diffusion of the adatoms among the facets. These properties allow microfacet QWs, which, for example, emit yellow from the (0001) facet and blue from the {11 (2) over bar2} facet, to be fabricated, of which the luminescence appears white due to the additive color mixing. Using a mask pattern that consists of regions with and without stripes, the emissions from the microfacet QWs and from planar QWs are synthesized to produce the desired apparent output colors. (c) 2006 American Institute of Physics.

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