InGaN/GaN multi-quantum well distributed Bragg reflector laser diode

被引：18

作者：

Cho, JH ^{[1
]}

Cho, S ^{[1
]}

Kim, BJ ^{[1
]}

Chae, S ^{[1
]}

Sone, C ^{[1
]}

Nam, OH ^{[1
]}

Lee, JW ^{[1
]}

Park, Y ^{[1
]}

Kim, TI ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Photon Lab, Suwon 440600, South Korea

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 12期

关键词：

D O I：

10.1063/1.126072

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An electrically injected InGaN/GaN-based distributed Bragg reflector (DBR) laser was demonstrated. Surface grating was formed on both sides of ridge waveguide by chemically assisted ion beam etching technique. The observed threshold current was 375 mA with threshold voltage of 15.1 V for 500x3 mu m(2) devices. The emission of the DBR laser occurred in a single longitudinal mode at a wavelength of 401.3 nm. The ratio of sidemode suppression was found to be more than 13 dB until a current injection of 1 A. (C) 2000 American Institute of Physics. [S0003-6951(00)00512-X].

引用

页码：1489 / 1491

页数：3

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