Structural and optical properties of epitaxially overgrown third-order gratings for InGaN/GaN-based distributed feedback lasers

被引：11

作者：

Romano, LT ^{[1
]}

Hofstetter, D ^{[1
]}

McCluskey, MD ^{[1
]}

Bour, DP ^{[1
]}

Kneissl, M ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 19期

关键词：

D O I：

10.1063/1.122565

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Laser-diode heterostructures of InGaAlN containing a third-order diffraction grating for distributed optical feedback have been examined with transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The grating was defined holographically and etched by chemically assisted ion-beam etching into the upper GaN confinement layer of the laser structure. After the etch step, it was overgrown with an Al0.08Ga0.92N upper cladding layer. Threading dislocations were present that initiated at the sapphire substrate, but no new dislocations were observed at the grating/Al0.08Ga0.92 N interface. A comparison of TEM and SEM micrographs reveals that there is a compositional gradient in the AlGaN upper cladding layer; however, calculations show that it did not reduce the optical coupling coefficient of the grating. (C) 1998 American Institute of Physics. [S0003-6951(98)04545-].

引用

页码：2706 / 2708

页数：3

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