Room-temperature pulsed operation of an electrically injected InGaN/GaN multi-quantum well distributed feedback laser

被引：47

作者：

Hofstetter, D ^{[1
]}

Thornton, RL ^{[1
]}

Romano, LT ^{[1
]}

Bour, DP ^{[1
]}

Kneissl, M ^{[1
]}

Donaldson, RM ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 15期

关键词：

D O I：

10.1063/1.122409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate room-temperature pulsed operation of an electrically injected InGaN/GaN-based distributed feedback laser with an emission wavelength of 403 nm. The threshold current of a 1000-mu m-long and 20-mu mwide device was 3.2 A; corresponding to a threshold current density of 16 kA/cm(2). The 3rd order grating providing feedback was defined holographically and dry etched into the upper waveguiding layer by chemically assisted ion beam etching. We observed single mode operation of the laser with a side mode suppression ratio of 15 dB over a temperature range of about 30 K. (C) 1998 American Institute of Physics. [S0003-6951(98)00841-9].

引用

页码：2158 / 2160

页数：3

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