Demonstration of an InGaN/GaN-based optically pumped multiquantum well distributed feedback laser using holographically defined third-order gratings

被引:12
作者
Hofstetter, D [1 ]
Thornton, RL [1 ]
Kneissl, M [1 ]
Bour, DP [1 ]
Dunnrowicz, C [1 ]
机构
[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA
关键词
D O I
10.1063/1.122325
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate an optically pumped InGaN/GaN-based multiquantum well distributed feedback laser in the blue spectral region. The third-order grating providing feedback was defined holographically and dry etched into the upper waveguiding layer by chemically assisted ion-beam etching. When aligning the stripe-shaped pump beam either parallel or perpendicular to the grating grooves, we found a considerably lower pumping threshold, higher slope efficiency, a slightly longer emission wavelength, and a much narrower linewidth for the geometry with the pump beam orthogonal to the grating lines. A nearly constant emission wavelength of 400.85 nm and a linewidth of 0.7 Angstrom were observed under various pump intensities. To the best of our knowledge, this is the narrowest linewidth ever reported for an optically pumped device in this material system. (C) 1998 American Institute of Physics. [S0003-6951(98)00440-9].
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收藏
页码:1928 / 1930
页数:3
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