Effect of buffer layer on epitaxial growth of YSZ deposited on Si substrate by slower Q-switched 266 nm YAG laser

被引：16

作者：

Kaneko, S

Akiyama, K

Shimizu, Y

Ito, T

Yasaka, S

Mitsuhashi, M

Ohya, S

Saito, K

Watanabe, T

Okamoto, S

Funakubo, H

机构：

[1] Kanagawa Ind Technol Res Inst, Kanagawa 2430435, Japan

[2] PANanlyt Japan, Minato Ku, Tokyo 1050013, Japan

[3] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 4A期

关键词：

PLD; YAG; YSZ; epitaxial; Si; SiO2; thin film; silicon; ablation; XRD;

D O I：

10.1143/JJAP.43.1532

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Yttria-stabilized zirconia (YSZ) was grown on Si (100) substrate by pulsed laser deposition (PLD). The laser used in this study was a 266 nm YAG laser with a second function generator modulating only the Q-switch while the primary generator modulated the flash lamp (slower Q-switch). Epitaxial growth was verified on YSZ film deposited without oxygen gas followed by primary deposition in oxygen atmosphere on Si substrate with a similar to0.4-nm-thin oxide layer. The crystallinity was strongly dependent on the thickness of the buffer layer deposited prior to the primary deposition of YSZ. The epitaxial growth was confirmed by phi scan, and omega scan (rocking curve) showed the full width at half maximum (FWHM) of 1.1 deg. The required oxygen pressure for epitaxial growth was quite high compared to that of excimer deposition.

引用

页码：1532 / 1535

页数：4

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