Nanovoid formation in helium-implanted single-crystal silicon studied by in situ techniques -: art. no. 165209

被引：39

作者：

Frabboni, S

Corni, F

Nobili, C

Tonini, R

Ottaviani, G

机构：

[1] Univ Modena & Reggio Emilia, Dipartimento Fis, I-41100 Modena, Italy

[2] INFM, Natl Res Ctr Nanostruct & Biosyst Surfaces S3, I-41100 Modena, Italy

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.69.165209

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In situ transmission electron microscopy and thermal desorption spectrometry have been employed to observe the evolution of vacancy-type extended defects and the corresponding helium state in helium implanted single crystal silicon during thermal ramp annealing. The structural evolution, starting with the formation of a platelike cluster of highly pressurized helium bubbles and ending in an empty nanovoid, is performed conserving the total volume of vacancy-type extended defects forming each cluster. Structural adjustments occur by surface diffusion inside each cluster following a migration and coalescence mechanism in presence of high pressure helium for 350 degreesC<T<570 degreesC. A conservative Ostwald ripening is observed for 570<T<700 degreesC in presence of helium desorption.

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页码：165209 / 1

页数：6

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