Preparation of Al-doped ZnO thin films by RF thermal plasma evaporation

被引:20
作者
Tsujino, J
Homma, N
Sugawara, T
Shimono, I
Abe, Y
机构
[1] Hokkaido Elect Power Co Inc, Ebetsu, Hokkaido 0670033, Japan
[2] Hokkaido Ind Technol Ctr, Hakodate, Hokkaido 0410801, Japan
[3] Hokkaido Ind Res Inst, Kita Ku, Sapporo, Hokkaido 0600819, Japan
关键词
transparent conductive oxide film; Al-doped ZnO; thermal plasma evaporation;
D O I
10.1016/S0040-6090(02)00017-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, Al-doped ZnO films were prepared by RF thermal plasma evaporation, and the influence of the O-2 flow rate and Zn concentration in the raw solution on film growth was investigated. The surface roughness of the films was improved under a lower O-2 flow rate. The electrical resisitivity also decreased with decreasing O-2 flow rate, and the minimum resistivity of 9 x 10(-4) Omega cm was obtained at an O-2 flow rate of 30 ml/min, which corresponds to a ratio of 0.069% of total gas flow rate. The deposition rate increased proportionally with increasing Zn concentration in the raw solution. The film prepared at the maximum Zn concentration of 100 g/l exhibited a deposition rate of 110 nm/min and the electrical resistivity of 2.2 x 10(-3) Omega cm. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:86 / 91
页数:6
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