Nanometer scale electrical characterization of artificial mesostructures

被引：15

作者：

Durkan, C ^{[1
]}

Welland, ME ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Nanoscale Sci Lab, Cambridge CB2 1PZ, England

来源：

CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES | 2000年 / 25卷 / 01期

关键词：

nanoelectronics; electronic devices; electronic transport; atomic force microscopy;

D O I：

10.1080/10408430091149169

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this article, we review advances in experimental techniques for the electrical characterization of artificial mesostructures from nanometer to micrometer size. As the scale of electronic devices is rapidly approaching the 100-nm benchmark, new tools are becoming necessary to study and characterize them. We are also at a point where new tools to fabricate these devices are becoming increasingly relevant. We discuss the various characterization techniques applicable to objects of this scale, with particular emphasis on scanned probe methods.

引用

页码：1 / 28

页数：28

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