Theory of nanocomposite network transistors for macroelectronics applications

被引:44
作者
Alam, M. A.
Pimparkar, N.
Kumar, S.
Murthy, J.
机构
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47906 USA
[2] Purdue Univ, Sch Mech Engn, W Lafayette, IN 47907 USA
关键词
microelectronics; nanoscale; nanostructure;
D O I
10.1557/mrs2006.120
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A new class of nanocomposite network materials based on carbon nanotubes or silicon nanowires for thin-film transistors promises significant improvement in the performance of large-area electronics, or macroelectronics. Evaluation of this novel materials technology requires the development of device models. A multicomponent heterogeneous stick-percolation theory is used to show that the key features of this new transistor technology are the consequences of the percolating spatial geometry of the nanosticks (nanotubes, nanorods, or nanowires) that form the channel.
引用
收藏
页码:466 / 470
页数:5
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