High T0 long-wavelength InGaAsN quantum-well lasers grown by GSMBE using a solid arsenic source

被引：40

作者：

Wei, JA ^{[1
]}

Xia, FN ^{[1
]}

Li, CQ ^{[1
]}

Forrest, SR ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Ctr POEM, Princeton, NJ 08544 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2002年 / 14卷 / 05期

关键词：

InGaAsN; quantum-well lasers; solid source As;

D O I：

10.1109/68.998696

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate high performance, lambda = 1.3- and 1.4-mum wavelength InGaAsN-GaAs-InGaP quantum-well (QW) lasers grown lattice-matched to GaAs substrates by gas source molecular beam epitaxy (GSMBE) using a solid As source. Threshold current densities of 1.15 and 1.85 kA/cm(2) at lambda = 1.3 and 1.4 mum, respectively, were obtained for the lasers with a 7-mum ridge width and a 3-mm-long cavity. Internal quantum efficiencies of 82% and 52% were obtained for A = 1.3 and 1.4 pm emission, respectively, indicating that nonradiative processes are significantly reduced in the quantum well at lambda = 1.3 pm due to reduced N-H complex formation. These Fabry-Wrot lasers also show high characteristic temperatures of T-0 = 122 K and 100 K at lambda = 1.3 and 1.4 mum, respectively, as well as a low emission wavelength temperature dependence of (0.39 +/- 0.01) nm/degreesC over a temperature range of from 10 degreesC to 60 degreesC.

引用

页码：597 / 599

页数：3

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