Advances in a-Si:H/c-Si heterojunction solar cell fabrication and characterization

被引：112

作者：

Korte, L. ^{[1
]}

Conrad, E. ^{[1
]}

Angermann, H. ^{[1
]}

Stangl, R. ^{[1
]}

Schmidt, M. ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie, D-12489 Berlin, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2009年 / 93卷 / 6-7期

关键词：

Silicon; Heterojunction; High efficiency; Amorphous silicon; STATES;

D O I：

10.1016/j.solmat.2008.10.020

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Our progress in amorphous/crystalline silicon (a-Si:H/c-Si) heterojunction solar cell technology and Current understanding of fundamental device physics are presented. In a-Si:H/c-Si cells, device performance is strongly dependent on the quality of the a-Si:H/c-Si heterojunction. Four topics are crucial to minimize recombination at the junction and thereby maximize cell efficiency: wet-chemical pre-treatment of the c-Si surface prior to a-Si:H deposition: optimum a-Si:H doping: thermal and plasma post-treatments of the a-Si:H/c-Si structure. By optimizing these aspects using specifically developed characterization methods, we were able to realize (n)a-Si:H/(p)c-Si and (p)a-Si:H/(n)c-Si cells with up to 18.5% and 19.8% efficiency, respectively. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：905 / 910

页数：6

共 17 条

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